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M65KG512AB6W9 - 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM

M65KG512AB6W9_4320741.PDF Datasheet


 Full text search : 512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM


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M65KA512AB8W3 M65KA512AB 512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
STMICROELECTRONICS[STMicroelectronics]
MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
Micron Technology
MT47H32M16HR-25E MT47H64M8CF-25EG DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
Micron Technology
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SAMSUNG[Samsung semiconductor]
HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 512Mbit Double Data Rate (DDR) Components
Infineon
H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
Hynix Semiconductor
HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
Hynix Semiconductor
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
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256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
HY57V281620HCT-6 HY57V281620HCT-7 HY57V281620HCT-K 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
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HYNIX[Hynix Semiconductor]
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Numonyx B.V
 
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M65KG512AB6W9 Emitter M65KG512AB6W9 isa bus M65KG512AB6W9 Mode M65KG512AB6W9 channel M65KG512AB6W9 Reference
 

 

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